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IRF5810TR
- 型號:
- IRF5810TR
- 描述:
- MOSFET 2P-CH 20V 2.9A 6-TSOP
- 無鉛狀態/ RoHS狀態:
- 包含鉛/ RoHS不兼容
- 庫存數量:
- 16909 Pieces
- 數據表:
- IRF5810TR.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 1.2V @ 250µA |
|---|---|
| 供應商設備封裝: | 6-TSOP |
| 系列: | HEXFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 90 mOhm @ 2.9A, 4.5V |
| 功率 - 最大: | 960mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-23-6 Thin, TSOT-23-6 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | IRF5810TR |
| 輸入電容（Ciss）（Max）@ Vds: | 650pF @ 16V |
| 柵極電荷（Qg）（Max）@ Vgs: | 9.6nC @ 4.5V |
| FET型: | 2 P-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 P-Channel (Dual) 20V 2.9A 960mW Surface Mount 6-TSOP |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET 2P-CH 20V 2.9A 6-TSOP |
| 電流 - 25°C連續排水（Id）: | 2.9A |
| Email: | [email protected] |
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