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IRF200B211
- 型號:
- IRF200B211
- 描述:
- MOSFET N-CH 200V 12A TO-220AB
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 15219 Pieces
- 數據表:
- IRF200B211.pdf
簡單介紹
BYCHIPS是 IRF200B211的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IRF200B211購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4.9V @ 50µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-220AB |
| 系列: | HEXFET®, StrongIRFET™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 170 mOhm @ 7.2A, 10V |
| 功率耗散（最大）: | 80W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-220-3 |
| 其他名稱: | SP001561622 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 14 Weeks |
| 製造商零件編號: | IRF200B211 |
| 輸入電容（Ciss）（Max）@ Vds: | 790pF @ 50V |
| 柵極電荷（Qg）（Max）@ Vgs: | 23nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB |
| 漏極至源極電壓（Vdss）: | 200V |
| 描述: | MOSFET N-CH 200V 12A TO-220AB |
| 電流 - 25°C連續排水（Id）: | 12A (Tc) |
| Email: | [email protected] |
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