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		| VGS(TH)(最大)@標識: | 4V @ 250µA | 
|---|---|
| 技術: | MOSFET (Metal Oxide) | 
| 供應商設備封裝: | PG-TO220-3-1 | 
| 系列: | OptiMOS™ | 
| RDS(ON)(最大值)@標識,柵極電壓: | 4 mOhm @ 80A, 10V | 
| 功率耗散(最大): | 300W (Tc) | 
| 封装: | Tube | 
| 封裝/箱體: | TO-220-3 | 
| 其他名稱: | IPP80N04S2-H4 IPP80N04S2-H4-ND SP000218169 | 
| 工作溫度: | -55°C ~ 175°C (TJ) | 
| 安裝類型: | Through Hole | 
| 濕度敏感度(MSL): | 1 (Unlimited) | 
| 製造商零件編號: | IPP80N04S2H4AKSA1 | 
| 輸入電容(Ciss)(Max)@ Vds: | 4400pF @ 25V | 
| 柵極電荷(Qg)(Max)@ Vgs: | 148nC @ 10V | 
| FET型: | N-Channel | 
| FET特點: | - | 
| 展開說明: | N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1 | 
| 漏極至源極電壓(Vdss): | 40V | 
| 描述: | MOSFET N-CH 40V 80A TO220-3 | 
| 電流 - 25°C連續排水(Id): | 80A (Tc) | 
| Email: | [email protected] |