購買 IPI147N12N3GAKSA1與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 4V @ 61µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO262-3 |
| 系列: | OptiMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 14.7 mOhm @ 56A, 10V |
| 功率耗散(最大): | 107W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 其他名稱: | IPI147N12N3 G IPI147N12N3 G-ND IPI147N12N3G SP000652744 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商標準交貨期: | 14 Weeks |
| 製造商零件編號: | IPI147N12N3GAKSA1 |
| 輸入電容(Ciss)(Max)@ Vds: | 3220pF @ 60V |
| 柵極電荷(Qg)(Max)@ Vgs: | 49nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 120V 56A (Ta) 107W (Tc) Through Hole PG-TO262-3 |
| 漏極至源極電壓(Vdss): | 120V |
| 描述: | MOSFET N-CH 120V 56A TO262-3 |
| 電流 - 25°C連續排水(Id): | 56A (Ta) |
| Email: | [email protected] |