購買 IPD640N06LGBTMA1與BYCHPS
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| VGS(TH)(最大)@標識: | 2V @ 16µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO252-3 |
| 系列: | OptiMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 64 mOhm @ 18A, 10V |
| 功率耗散(最大): | 47W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | IPD640N06L G IPD640N06L G-ND IPD640N06LG IPD640N06LGINTR IPD640N06LGINTR-ND IPD640N06LGXT SP000203939 SP000443766 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | IPD640N06LGBTMA1 |
| 輸入電容(Ciss)(Max)@ Vds: | 470pF @ 30V |
| 柵極電荷(Qg)(Max)@ Vgs: | 13nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 60V 18A (Tc) 47W (Tc) Surface Mount PG-TO252-3 |
| 漏極至源極電壓(Vdss): | 60V |
| 描述: | MOSFET N-CH 60V 18A TO-252 |
| 電流 - 25°C連續排水(Id): | 18A (Tc) |
| Email: | [email protected] |