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IPD50R800CE
- 型號:
- IPD50R800CE
- 描述:
- MOSFET N CH 500V 5A TO252
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16992 Pieces
- 數據表:
- IPD50R800CE.pdf
簡單介紹
BYCHIPS是 IPD50R800CE的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPD50R800CE購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 130µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO252-3 |
| 系列: | CoolMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 800 mOhm @ 1.5A, 13V |
| 功率耗散（最大）: | 40W (Tc) |
| 封装: | Original-Reel® |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | IPD50R800CEDR IPD50R800CEDR-ND |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | IPD50R800CE |
| 輸入電容（Ciss）（Max）@ Vds: | 280pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 12.4nC @ 10V |
| FET型: | N-Channel |
| FET特點: | Super Junction |
| 展開說明: | N-Channel 500V 5A (Tc) 40W (Tc) Surface Mount PG-TO252-3 |
| 漏極至源極電壓（Vdss）: | 500V |
| 描述: | MOSFET N CH 500V 5A TO252 |
| 電流 - 25°C連續排水（Id）: | 5A (Tc) |
| Email: | [email protected] |
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