購買 IPB65R660CFD與BYCHPS
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| VGS(TH)(最大)@標識: | 4.5V @ 200µA |
|---|---|
| Vgs(最大): | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO263 |
| 系列: | CoolMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 660 mOhm @ 2.1A, 10V |
| 功率耗散(最大): | 62.5W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | IPB65R660CFD-ND IPB65R660CFDATMA1 SP000861698 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | IPB65R660CFD |
| 輸入電容(Ciss)(Max)@ Vds: | 615pF @ 100V |
| 柵極電荷(Qg)(Max)@ Vgs: | 22nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263 |
| 驅動電壓(最大Rds開,最小Rds開): | 10V |
| 漏極至源極電壓(Vdss): | 650V |
| 描述: | MOSFET N-CH 650V 6A TO263 |
| 電流 - 25°C連續排水(Id): | 6A (Tc) |
| Email: | [email protected] |