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IPB60R190P6ATMA1
- 型號:
- IPB60R190P6ATMA1
- 描述:
- MOSFET N-CH 600V TO263-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 13178 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 4.5V @ 630µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO263 |
| 系列: | CoolMOS™ P6 |
| RDS（ON）（最大值）@標識，柵極電壓: | 190 mOhm @ 7.6A, 10V |
| 功率耗散（最大）: | 151W (Tc) |
| 封装: | Original-Reel® |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | IPB60R190P6ATMA1DKR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 12 Weeks |
| 製造商零件編號: | IPB60R190P6ATMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 1750pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 37nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263 |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 600V |
| 描述: | MOSFET N-CH 600V TO263-3 |
| 電流 - 25°C連續排水（Id）: | 20.2A (Tc) |
| Email: | [email protected] |
IPB60R190P6ATMA1的相似型號
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|---|---|---|---|---|
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IPB60R190C6 | Infineon Technologies | MOSFET N-CH 600V 20.2A TO263 | 在線詢價 |
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IPB60R180C7ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 在線詢價 |
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IPB60R199CP | Infineon Technologies | MOSFET N-CH 650V 16A TO-263 | 在線詢價 |
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IPB60R160P6ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | 在線詢價 |
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IPB60R380P6ATMA1 | Infineon Technologies | MOSFET N-CH 600V TO263-3 | 在線詢價 |
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