購買 IPB097N08N3 G與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 3.5V @ 46µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO263-2 |
系列: | OptiMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 9.7 mOhm @ 46A, 10V |
功率耗散(最大): | 100W (Tc) |
封装: | Tape & Reel (TR) |
封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
其他名稱: | IPB097N08N3 G-ND IPB097N08N3G |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Surface Mount |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | IPB097N08N3 G |
輸入電容(Ciss)(Max)@ Vds: | 2410pF @ 40V |
柵極電荷(Qg)(Max)@ Vgs: | 35nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 80V 70A (Tc) 100W (Tc) Surface Mount PG-TO263-2 |
漏極至源極電壓(Vdss): | 80V |
描述: | MOSFET N-CH 80V 70A TO263-3 |
電流 - 25°C連續排水(Id): | 70A (Tc) |
Email: | [email protected] |