購買 IPAN65R650CEXKSA1與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 3.5V @ 210µA |
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Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO220 Full Pack |
系列: | CoolMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 650 mOhm @ 2.1A, 10V |
功率耗散(最大): | 28W (Tc) |
封装: | Tube |
封裝/箱體: | TO-220-3 Full Pack |
其他名稱: | SP001508828 |
工作溫度: | -40°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 12 Weeks |
製造商零件編號: | IPAN65R650CEXKSA1 |
輸入電容(Ciss)(Max)@ Vds: | 440pF @ 100V |
柵極電荷(Qg)(Max)@ Vgs: | 23nC @ 10V |
FET型: | N-Channel |
FET特點: | Super Junction |
展開說明: | N-Channel 650V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack |
驅動電壓(最大Rds開,最小Rds開): | 10V |
漏極至源極電壓(Vdss): | 650V |
描述: | MOSFET NCH 650V 10.1A TO220-3 |
電流 - 25°C連續排水(Id): | 10.1A (Tc) |
Email: | [email protected] |