購買 FQI3N30TU與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 5V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | I2PAK |
| 系列: | QFET® |
| RDS(ON)(最大值)@標識,柵極電壓: | 2.2 Ohm @ 1.6A, 10V |
| 功率耗散(最大): | 3.13W (Ta), 55W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | FQI3N30TU |
| 輸入電容(Ciss)(Max)@ Vds: | 230pF @ 25V |
| 柵極電荷(Qg)(Max)@ Vgs: | 7nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 300V 3.2A (Tc) 3.13W (Ta), 55W (Tc) Through Hole I2PAK |
| 漏極至源極電壓(Vdss): | 300V |
| 描述: | MOSFET N-CH 300V 3.2A I2PAK |
| 電流 - 25°C連續排水(Id): | 3.2A (Tc) |
| Email: | [email protected] |