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FDR858P
- 型號:
- FDR858P
- 描述:
- MOSFET P-CH 30V 8A SSOT-8
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16088 Pieces
- 數據表:
- FDR858P.pdf
簡單介紹
BYCHIPS是 FDR858P的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的FDR858P購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | SuperSOT™-8 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 19 mOhm @ 8A, 10V |
| 功率耗散（最大）: | 1.8W (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-SMD, Gull Wing |
| 其他名稱: | FDR858P-ND FDR858PTR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | FDR858P |
| 輸入電容（Ciss）（Max）@ Vds: | 2010pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 30nC @ 5V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 30V 8A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8 |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET P-CH 30V 8A SSOT-8 |
| 電流 - 25°C連續排水（Id）: | 8A (Ta) |
| Email: | [email protected] |
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