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DTD114GCT116
- 型號:
- DTD114GCT116
- 描述:
- NPN 500MA/50V DIGITAL TRANSISTOR
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17734 Pieces
- 數據表:
- DTD114GCT116.pdf
簡單介紹
BYCHIPS是 DTD114GCT116的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的DTD114GCT116購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 50V |
|---|---|
| Vce飽和（最大）@ IB，IC: | 300mV @ 2.5mA, 50mA |
| 晶體管類型: | NPN - Pre-Biased |
| 供應商設備封裝: | SST3 |
| 系列: | - |
| 電阻 - 發射極基（R 2）（歐姆）: | 10k |
| 電阻 - 基（R 1）（歐姆）: | - |
| 功率 - 最大: | 200mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-236-3, SC-59, SOT-23-3 |
| 其他名稱: | DTD114GCT116TR |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | DTD114GCT116 |
| 頻率 - 轉換: | 200MHz |
| 展開說明: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SST3 |
| 描述: | NPN 500MA/50V DIGITAL TRANSISTOR |
| 直流電流增益（HFE）（最小值）@ IC，的Vce: | 56 @ 50mA, 5V |
| 電流 - 集電極截止（最大）: | 500nA (ICBO) |
| 電流 - 集電極（Ic）（最大）: | 500mA |
| Email: | [email protected] |
DTD114GCT116的相似型號
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