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DRDNB26W-7
- 型號:
- DRDNB26W-7
- 描述:
- TRANS PREBIAS NPN/DIODE SOT363
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17023 Pieces
- 數據表:
- DRDNB26W-7.pdf
簡單介紹
BYCHIPS是 DRDNB26W-7的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的DRDNB26W-7購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 50V |
|---|---|
| Vce飽和（最大）@ IB，IC: | 300mV @ 2.5mA, 50mA |
| 晶體管類型: | NPN - Pre-Biased + Diode |
| 供應商設備封裝: | SOT-363 |
| 系列: | - |
| 電阻 - 發射極基（R 2）（歐姆）: | 4.7k |
| 電阻 - 基（R 1）（歐姆）: | 220 |
| 功率 - 最大: | 200mW |
| 封装: | Cut Tape (CT) |
| 封裝/箱體: | 6-TSSOP, SC-88, SOT-363 |
| 其他名稱: | DRDNB26WDICT |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | DRDNB26W-7 |
| 頻率 - 轉換: | 200MHz |
| 展開說明: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50V 600mA 200MHz 200mW Surface Mount SOT-363 |
| 描述: | TRANS PREBIAS NPN/DIODE SOT363 |
| 直流電流增益（HFE）（最小值）@ IC，的Vce: | 47 @ 50mA, 5V |
| 電流 - 集電極截止（最大）: | 500nA |
| 電流 - 集電極（Ic）（最大）: | 600mA |
| Email: | [email protected] |
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