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DMJ70H1D3SJ3
- 型號:
- DMJ70H1D3SJ3
- 描述:
- MOSFET N-CH TO251
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12914 Pieces
- 數據表:
- DMJ70H1D3SJ3.pdf
簡單介紹
BYCHIPS是 DMJ70H1D3SJ3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的DMJ70H1D3SJ3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-251 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 1.3 Ohm @ 2.5A, 10V |
| 功率耗散（最大）: | 41W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
| 工作溫度: | -55°C ~ 155°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 8 Weeks |
| 製造商零件編號: | DMJ70H1D3SJ3 |
| 輸入電容（Ciss）（Max）@ Vds: | 351pF @ 50V |
| 柵極電荷（Qg）（Max）@ Vgs: | 13.9nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 700V 4.6A (Tc) 41W (Tc) Through Hole TO-251 |
| 漏極至源極電壓（Vdss）: | 700V |
| 描述: | MOSFET N-CH TO251 |
| 電流 - 25°C連續排水（Id）: | 4.6A (Tc) |
| Email: | [email protected] |
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