購買 DMJ70H1D3SJ3與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 4V @ 250µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | TO-251 |
系列: | - |
RDS(ON)(最大值)@標識,柵極電壓: | 1.3 Ohm @ 2.5A, 10V |
功率耗散(最大): | 41W (Tc) |
封装: | Tube |
封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
工作溫度: | -55°C ~ 155°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 8 Weeks |
製造商零件編號: | DMJ70H1D3SJ3 |
輸入電容(Ciss)(Max)@ Vds: | 351pF @ 50V |
柵極電荷(Qg)(Max)@ Vgs: | 13.9nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 700V 4.6A (Tc) 41W (Tc) Through Hole TO-251 |
漏極至源極電壓(Vdss): | 700V |
描述: | MOSFET N-CH TO251 |
電流 - 25°C連續排水(Id): | 4.6A (Tc) |
Email: | [email protected] |