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DMG6601LVT-7
- 型號:
- DMG6601LVT-7
- 描述:
- MOSFET N/P-CH 30V 26TSOT
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 18394 Pieces
- 數據表:
- DMG6601LVT-7.pdf
簡單介紹
BYCHIPS是 DMG6601LVT-7的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的DMG6601LVT-7購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 1.5V @ 250µA |
|---|---|
| 供應商設備封裝: | TSOT-26 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 55 mOhm @ 3.4A, 10V |
| 功率 - 最大: | 850mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-23-6 Thin, TSOT-23-6 |
| 其他名稱: | DMG6601LVT-7DITR DMG6601LVT7 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 8 Weeks |
| 製造商零件編號: | DMG6601LVT-7 |
| 輸入電容（Ciss）（Max）@ Vds: | 422pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 12.3nC @ 10V |
| FET型: | N and P-Channel |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26 |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N/P-CH 30V 26TSOT |
| 電流 - 25°C連續排水（Id）: | 3.8A, 2.5A |
| Email: | [email protected] |
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