購買 DMG4N60SJ3與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 4.5V @ 250µA |
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供應商設備封裝: | TO-251 |
系列: | - |
RDS(ON)(最大值)@標識,柵極電壓: | 2.5 Ohm @ 2A, 10V |
功率 - 最大: | 41W |
封装: | Tube |
封裝/箱體: | TO-251-3 Long Leads, IPak, TO-251AB |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 8 Weeks |
製造商零件編號: | DMG4N60SJ3 |
輸入電容(Ciss)(Max)@ Vds: | 532pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 14.3nC @ 10V |
FET型: | MOSFET N-Channel, Metal Oxide |
FET特點: | Standard |
展開說明: | Mosfet Array MOSFET N-Channel, Metal Oxide 600V 3A (Tc) 41W Through Hole TO-251 |
漏極至源極電壓(Vdss): | 600V |
描述: | MOSFET NCH 600V 3A TO251 |
電流 - 25°C連續排水(Id): | 3A (Tc) |
Email: | [email protected] |