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SQJB80EP-T1_GE3
- 型號:
- SQJB80EP-T1_GE3
- 描述:
- MOSFET ARRAY 2N-CH 80V SO8
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14363 Pieces
簡單介紹
BYCHIPS是 SQJB80EP-T1_GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SQJB80EP-T1_GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.5V @ 250µA |
|---|---|
| 供應商設備封裝: | PowerPAK® SO-8 Dual |
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 19 mOhm @ 8A, 10V |
| 功率 - 最大: | 48W |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | PowerPAK® SO-8 Dual |
| 其他名稱: | SQJB80EP-T1_GE3TR |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 13 Weeks |
| 製造商零件編號: | SQJB80EP-T1_GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 1400pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 32nC @ 10V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Standard |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 80V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual |
| 漏極至源極電壓（Vdss）: | 80V |
| 描述: | MOSFET ARRAY 2N-CH 80V SO8 |
| 電流 - 25°C連續排水（Id）: | 30A (Tc) |
| Email: | [email protected] |
SQJB80EP-T1_GE3的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
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BSS84V-7 | Diodes Incorporated | MOSFET 2P-CH 50V 0.13A SOT-563 | 在線詢價 |
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SI1034CX-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V SC89-6 | 在線詢價 |
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IRF5850 | Infineon Technologies | MOSFET 2P-CH 20V 2.2A 6TSOP | 在線詢價 |
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LKK47-06C5 | IXYS | MOSFET 2N-CH 600V 47A ISOPLUS264 | 在線詢價 |
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SIA918EDJ-T1-GE3 | Vishay Siliconix | MOSFET ARRAY 2N-CH 30V SC70-6 | 在線詢價 |
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IRFHS9351TR2PBF | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 在線詢價 |
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SI7942DP-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 100V 3.8A PPAK SO-8 | 在線詢價 |
 |
APTM10TDUM09PG | Microsemi Corporation | MOSFET 6N-CH 100V 139A SP6-P | 在線詢價 |
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