購買 SPB20N60S5ATMA1與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 5.5V @ 1mA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO263-3-2 |
| 系列: | CoolMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 190 mOhm @ 13A, 10V |
| 功率耗散(最大): | 208W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | SPB20N60S5 SPB20N60S5-ND SPB20N60S5INTR SPB20N60S5INTR-ND SPB20N60S5XT |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | SPB20N60S5ATMA1 |
| 輸入電容(Ciss)(Max)@ Vds: | 3000pF @ 25V |
| 柵極電荷(Qg)(Max)@ Vgs: | 103nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2 |
| 漏極至源極電壓(Vdss): | 600V |
| 描述: | MOSFET N-CH 600V 20A TO-263 |
| 電流 - 25°C連續排水(Id): | 20A (Tc) |
| Email: | [email protected] |