購買 SI5402DC-T1-GE3與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 1V @ 250µA (Min) |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 1206-8 ChipFET™ |
| 系列: | TrenchFET® |
| RDS(ON)(最大值)@標識,柵極電壓: | 35 mOhm @ 4.9A, 10V |
| 功率耗散(最大): | 1.3W (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-SMD, Flat Lead |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | SI5402DC-T1-GE3 |
| 輸入電容(Ciss)(Max)@ Vds: | - |
| 柵極電荷(Qg)(Max)@ Vgs: | 20nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
| 漏極至源極電壓(Vdss): | 30V |
| 描述: | MOSFET N-CH 30V 4.9A 1206-8 |
| 電流 - 25°C連續排水(Id): | 4.9A (Ta) |
| Email: | [email protected] |