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SI3993DV-T1-E3
- 型號:
- SI3993DV-T1-E3
- 描述:
- MOSFET 2P-CH 30V 1.8A 6-TSOP
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14037 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 3V @ 250µA |
|---|---|
| 供應商設備封裝: | 6-TSOP |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 133 mOhm @ 2.2A, 10V |
| 功率 - 最大: | 830mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-23-6 Thin, TSOT-23-6 |
| 其他名稱: | SI3993DV-T1-E3TR SI3993DVT1E3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 12 Weeks |
| 製造商零件編號: | SI3993DV-T1-E3 |
| 輸入電容（Ciss）（Max）@ Vds: | - |
| 柵極電荷（Qg）（Max）@ Vgs: | 5nC @ 4.5V |
| FET型: | 2 P-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Surface Mount 6-TSOP |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET 2P-CH 30V 1.8A 6-TSOP |
| 電流 - 25°C連續排水（Id）: | 1.8A |
| Email: | [email protected] |
SI3993DV-T1-E3的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
SI3993DV-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 30V 1.8A 6-TSOP | 在線詢價 |
 |
SIZF906DT-T1-GE3 | Vishay Siliconix | MOSFET ARRAY 2N-CH 30V POWERPAIR | 在線詢價 |
 |
AUIRF7342Q | Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | 在線詢價 |
 |
ALD1108EPCL | Advanced Linear Devices Inc. | MOSFET 4N-CH 10V 16DIP | 在線詢價 |
|
SI3993CDV-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 30V 2.9A 6-TSOP | 在線詢價 |
 |
SSM6L16FETE85LF | Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | 在線詢價 |
 |
ZXMN2AMCTA | Diodes Incorporated | MOSFET 2N-CH 20V 2.9A DFN | 在線詢價 |
 |
DMC2450UV-7 | Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | 在線詢價 |
|
IRF7380TRPBF | Infineon Technologies | MOSFET 2N-CH 80V 3.6A 8-SOIC | 在線詢價 |
 |
DMC2038LVT-7 | Diodes Incorporated | MOSFET N/P-CH 20V TSOT26 | 在線詢價 |
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