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RF4E110BNTR
- 型號:
- RF4E110BNTR
- 描述:
- MOSFET N-CH 30V 11A 8-HUML
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17319 Pieces
- 數據表:
- RF4E110BNTR.pdf
簡單介紹
BYCHIPS是 RF4E110BNTR的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的RF4E110BNTR購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2V @ 250µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 6-HUML2020L8 (2x2) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 11.1 mOhm @ 11A, 10V |
| 功率耗散（最大）: | 2W (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerUDFN |
| 其他名稱: | RF4E110BNTRTR |
| 工作溫度: | 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | RF4E110BNTR |
| 輸入電容（Ciss）（Max）@ Vds: | 1200pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 24nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 30V 11A (Ta) 2W (Ta) Surface Mount 6-HUML2020L8 (2x2) |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V, 10V |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N-CH 30V 11A 8-HUML |
| 電流 - 25°C連續排水（Id）: | 11A (Ta) |
| Email: | [email protected] |
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