購買 IXTH76P10T與BYCHPS
購買即有保證
 
		| VGS(TH)(最大)@標識: | 4V @ 250µA | 
|---|---|
| Vgs(最大): | ±15V | 
| 技術: | MOSFET (Metal Oxide) | 
| 供應商設備封裝: | TO-247 (IXTH) | 
| 系列: | TrenchP™ | 
| RDS(ON)(最大值)@標識,柵極電壓: | 25 mOhm @ 500mA, 10V | 
| 功率耗散(最大): | 298W (Tc) | 
| 封装: | Tube | 
| 封裝/箱體: | TO-247-3 | 
| 工作溫度: | -55°C ~ 150°C (TJ) | 
| 安裝類型: | Through Hole | 
| 濕度敏感度(MSL): | 1 (Unlimited) | 
| 製造商標準交貨期: | 6 Weeks | 
| 製造商零件編號: | IXTH76P10T | 
| 輸入電容(Ciss)(Max)@ Vds: | 13700pF @ 25V | 
| 柵極電荷(Qg)(Max)@ Vgs: | 197nC @ 10V | 
| FET型: | P-Channel | 
| FET特點: | - | 
| 展開說明: | P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH) | 
| 驅動電壓(最大Rds開,最小Rds開): | 10V | 
| 漏極至源極電壓(Vdss): | 100V | 
| 描述: | MOSFET P-CH 100V 76A TO-247 | 
| 電流 - 25°C連續排水(Id): | 76A (Tc) | 
| Email: | [email protected] |