購買 IRF8306MTR1PBF與BYCHPS
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| VGS(TH)(最大)@標識: | 2.35V @ 100µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | DIRECTFET™ MX |
| 系列: | HEXFET® |
| RDS(ON)(最大值)@標識,柵極電壓: | 2.5 mOhm @ 23A, 10V |
| 功率耗散(最大): | 2.1W (Ta), 75W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | DirectFET™ Isometric MX |
| 其他名稱: | IRF8306MTR1PBFTR SP001551608 |
| 工作溫度: | -40°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | IRF8306MTR1PBF |
| 輸入電容(Ciss)(Max)@ Vds: | 4110pF @ 15V |
| 柵極電荷(Qg)(Max)@ Vgs: | 38nC @ 4.5V |
| FET型: | N-Channel |
| FET特點: | Schottky Diode (Body) |
| 展開說明: | N-Channel 30V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX |
| 漏極至源極電壓(Vdss): | 30V |
| 描述: | MOSFET N-CH 30V 23A DIRECTFET |
| 電流 - 25°C連續排水(Id): | 23A (Ta), 140A (Tc) |
| Email: | [email protected] |