購買 IPI90R800C3XKSA1與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 3.5V @ 460µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO262-3 |
系列: | CoolMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 800 mOhm @ 4.1A, 10V |
功率耗散(最大): | 104W (Tc) |
封装: | Tube |
封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
其他名稱: | IPI90R800C3 IPI90R800C3-ND SP000413730 SP000683086 |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 6 Weeks |
製造商零件編號: | IPI90R800C3XKSA1 |
輸入電容(Ciss)(Max)@ Vds: | 1100pF @ 100V |
柵極電荷(Qg)(Max)@ Vgs: | 42nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 900V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3 |
漏極至源極電壓(Vdss): | 900V |
描述: | MOSFET N-CH 900V 6.9A TO-262 |
電流 - 25°C連續排水(Id): | 6.9A (Tc) |
Email: | [email protected] |