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IPI65R190C6XKSA1
- 型號:
- IPI65R190C6XKSA1
- 描述:
- MOSFET N-CH 650V 20.2A TO262
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14288 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 730µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO262-3 |
| 系列: | CoolMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 190 mOhm @ 7.3A, 10V |
| 功率耗散（最大）: | 151W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 其他名稱: | IPI65R190C6 IPI65R190C6-ND SP000863900 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 12 Weeks |
| 製造商零件編號: | IPI65R190C6XKSA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 1620pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 73nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3 |
| 漏極至源極電壓（Vdss）: | 650V |
| 描述: | MOSFET N-CH 650V 20.2A TO262 |
| 電流 - 25°C連續排水（Id）: | 20.2A (Tc) |
| Email: | [email protected] |
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