購買 IPI100N08N3GHKSA1與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 3.5V @ 46µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO262-3 |
系列: | OptiMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 10 mOhm @ 46A, 10V |
功率耗散(最大): | 100W (Tc) |
封装: | Tube |
封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
其他名稱: | IPI100N08N3 G IPI100N08N3 G-ND SP000474192 SP000680710 |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | IPI100N08N3GHKSA1 |
輸入電容(Ciss)(Max)@ Vds: | 2410pF @ 40V |
柵極電荷(Qg)(Max)@ Vgs: | 35nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-TO262-3 |
漏極至源極電壓(Vdss): | 80V |
描述: | MOSFET N-CH 80V 70A TO262-3 |
電流 - 25°C連續排水(Id): | 70A (Tc) |
Email: | [email protected] |