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IPG20N06S4L11ATMA1
- 型號:
- IPG20N06S4L11ATMA1
- 描述:
- MOSFET 2N-CH 8TDSON
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12971 Pieces
簡單介紹
BYCHIPS是 IPG20N06S4L11ATMA1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPG20N06S4L11ATMA1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.2V @ 28µA |
|---|---|
| 供應商設備封裝: | PG-TDSON-8-4 |
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 11.2 mOhm @ 17A, 10V |
| 功率 - 最大: | 65W |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerVDFN |
| 其他名稱: | SP000705550 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 26 Weeks |
| 製造商零件編號: | IPG20N06S4L11ATMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 4020pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 53nC @ 10V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 60V 20A 65W Surface Mount PG-TDSON-8-4 |
| 漏極至源極電壓（Vdss）: | 60V |
| 描述: | MOSFET 2N-CH 8TDSON |
| 電流 - 25°C連續排水（Id）: | 20A |
| Email: | [email protected] |
IPG20N06S4L11ATMA1的相似型號
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IPG20N06S415ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S4L14ATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S4L14AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S415AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S415ATMA2 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S4L14ATMA2 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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IPG20N06S2L35ATMA1 | Infineon Technologies | MOSFET 2N-CH 55V 20A TDSON-8-4 | 在線詢價 |
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IPG20N06S2L35AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | 在線詢價 |
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