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IPD70N10S3L12ATMA1
- 型號:
- IPD70N10S3L12ATMA1
- 描述:
- MOSFET N-CH 100V 70A TO252-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14509 Pieces
簡單介紹
BYCHIPS是 IPD70N10S3L12ATMA1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPD70N10S3L12ATMA1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.4V @ 83µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO252-3 |
| 系列: | OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 11.5 mOhm @ 70A, 10V |
| 功率耗散（最大）: | 125W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | IPD70N10S3L-12 IPD70N10S3L-12-ND IPD70N10S3L-12TR IPD70N10S3L-12TR-ND IPD70N10S3L12 SP000261250 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 26 Weeks |
| 製造商零件編號: | IPD70N10S3L12ATMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 5550pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 77nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 100V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3 |
| 漏極至源極電壓（Vdss）: | 100V |
| 描述: | MOSFET N-CH 100V 70A TO252-3 |
| 電流 - 25°C連續排水（Id）: | 70A (Tc) |
| Email: | [email protected] |
IPD70N10S3L12ATMA1的相似型號
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|---|---|---|---|---|
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IPD70N10S3L-12 | Infineon Technologies | MOSFET N-CH 100V 70A TO252-3 | 在線詢價 |
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IPD70R1K4P7SAUMA1 | Infineon Technologies | MOSFET N-CH 700V 8.2A DPAK | 在線詢價 |
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IPD70R2K0CEAUMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | 在線詢價 |
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IPD70R950CEAUMA1 | Infineon Technologies | MOSFET N-CH 700V 7.4A TO252-3 | 在線詢價 |
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