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IPB031NE7N3GATMA1
- 型號:
- IPB031NE7N3GATMA1
- 描述:
- MOSFET N-CH 75V 100A TO263-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12330 Pieces
簡單介紹
BYCHIPS是 IPB031NE7N3GATMA1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPB031NE7N3GATMA1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3.8V @ 155µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO263-3-2 |
| 系列: | OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 3.1 mOhm @ 100A, 10V |
| 功率耗散（最大）: | 214W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | IPB031NE7N3 G IPB031NE7N3 G-ND IPB031NE7N3 GTR-ND IPB031NE7N3G SP000641730 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 14 Weeks |
| 製造商零件編號: | IPB031NE7N3GATMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 8130pF @ 37.5V |
| 柵極電荷（Qg）（Max）@ Vgs: | 117nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 75V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2 |
| 漏極至源極電壓（Vdss）: | 75V |
| 描述: | MOSFET N-CH 75V 100A TO263-3 |
| 電流 - 25°C連續排水（Id）: | 100A (Tc) |
| Email: | [email protected] |
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