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IPA65R190E6XKSA1
- 型號:
- IPA65R190E6XKSA1
- 描述:
- MOSFET N-CH 650V 20.2A TO220
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 13409 Pieces
簡單介紹
BYCHIPS是 IPA65R190E6XKSA1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IPA65R190E6XKSA1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 730µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO220 Full Pack |
| 系列: | CoolMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 190 mOhm @ 7.3A, 10V |
| 功率耗散（最大）: | 34W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-220-3 Full Pack |
| 其他名稱: | IPA65R190E6 IPA65R190E6-ND SP000863904 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 12 Weeks |
| 製造商零件編號: | IPA65R190E6XKSA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 1620pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 73nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220 Full Pack |
| 漏極至源極電壓（Vdss）: | 650V |
| 描述: | MOSFET N-CH 650V 20.2A TO220 |
| 電流 - 25°C連續排水（Id）: | 20.2A (Tc) |
| Email: | [email protected] |
IPA65R190E6XKSA1的相似型號
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IPA65R190C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO220 | 在線詢價 |
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IPA65R150CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 22.4A TO220 | 在線詢價 |
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IPA65R600E6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO220 | 在線詢價 |
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IPA65R1K0CEXKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 在線詢價 |
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IPA65R660CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO220 | 在線詢價 |
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IPA65R1K5CEXKSA1 | Infineon Technologies | MOSFET N-CH 650V TO220-3 | 在線詢價 |
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