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APTM100H46FT3G
- 型號:
- APTM100H46FT3G
- 製造商:
- Microsemi
- 描述:
- MOSFET 4N-CH 1000V 19A SP3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19364 Pieces
簡單介紹
BYCHIPS是 APTM100H46FT3G的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的APTM100H46FT3G購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 5V @ 2.5mA |
|---|---|
| 供應商設備封裝: | SP3 |
| 系列: | POWER MOS 8™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 552 mOhm @ 16A, 10V |
| 功率 - 最大: | 357W |
| 封装: | Bulk |
| 封裝/箱體: | SP3 |
| 工作溫度: | -40°C ~ 150°C (TJ) |
| 安裝類型: | Chassis Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 22 Weeks |
| 製造商零件編號: | APTM100H46FT3G |
| 輸入電容（Ciss）（Max）@ Vds: | 6800pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 260nC @ 10V |
| FET型: | 4 N-Channel (H-Bridge) |
| FET特點: | Standard |
| 展開說明: | Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 19A 357W Chassis Mount SP3 |
| 漏極至源極電壓（Vdss）: | 1000V (1kV) |
| 描述: | MOSFET 4N-CH 1000V 19A SP3 |
| 電流 - 25°C連續排水（Id）: | 19A |
| Email: | [email protected] |
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