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APT75GN120B2G
- 型號:
- APT75GN120B2G
- 製造商:
- Microsemi
- 描述:
- IGBT 1200V 200A 833W TMAX
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 15472 Pieces
簡單介紹
BYCHIPS是 APT75GN120B2G的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的APT75GN120B2G購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 1200V |
|---|---|
| 的VCE（on）（最大）@ VGE，IC: | 2.1V @ 15V, 75A |
| 測試條件: | 800V, 75A, 1 Ohm, 15V |
| Td（開/關）@ 25°C: | 60ns/620ns |
| 開關能量: | 8045µJ (on), 7640µJ (off) |
| 系列: | - |
| 功率 - 最大: | 833W |
| 封装: | Tube |
| 封裝/箱體: | TO-247-3 Variant |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | APT75GN120B2G |
| 輸入類型: | Standard |
| IGBT類型: | Trench Field Stop |
| 柵極電荷: | 425nC |
| 展開說明: | IGBT Trench Field Stop 1200V 200A 833W Through Hole |
| 描述: | IGBT 1200V 200A 833W TMAX |
| 電流 - 集電極脈衝（ICM）: | 225A |
| 電流 - 集電極（Ic）（最大）: | 200A |
| Email: | [email protected] |
APT75GN120B2G的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
APT75GN120JDQ3G | Microsemi Corporation | IGBT 1200V 124A 379W SOT227 | 在線詢價 |
 |
APT75M50B2 | Microsemi Corporation | MOSFET N-CH 500V 75A T-MAX | 在線詢價 |
|
APT75GT120JU2 | Microsemi Corporation | IGBT 1200V 100A 416W SOT227 | 在線詢價 |
 |
APT75DL120HJ | Microsemi Corporation | MOD DIODE 1200V SOT-227 | 在線詢價 |
|
APT75GP120JDQ3 | Microsemi Corporation | IGBT 1200V 128A 543W SOT227 | 在線詢價 |
|
APT75GN120J | Microsemi Corporation | IGBT 1200V 124A 379W SOT227 | 在線詢價 |
 |
APT75F50L | Microsemi Corporation | MOSFET N-CH 500V 75A TO-264 | 在線詢價 |
 |
APT75GN120LG | Microsemi Corporation | IGBT 1200V 200A 833W TO264 | 在線詢價 |
|
APT75GN120JDQ3 | Microsemi Corporation | IGBT 1200V 124A 379W SOT227 | 在線詢價 |
|
APT75GN60B2DQ3G | Microsemi Corporation | IGBT 600V 155A 536W TO264 | 在線詢價 |
 |
APT75DQ60BG | Microsemi Corporation | DIODE GEN PURP 600V 75A TO247 | 在線詢價 |
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