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APT70GR120J
- 型號:
- APT70GR120J
- 製造商:
- Microsemi
- 描述:
- IGBT 1200V 112A 543W SOT227
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 15859 Pieces
- 數據表:
- APT70GR120J.pdf
簡單介紹
BYCHIPS是 APT70GR120J的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的APT70GR120J購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 1200V |
|---|---|
| 的VCE（on）（最大）@ VGE，IC: | 3.2V @ 15V, 70A |
| 供應商設備封裝: | SOT-227 |
| 系列: | - |
| 功率 - 最大: | 543W |
| 封裝/箱體: | SOT-227-4 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| NTC熱敏電阻: | No |
| 安裝類型: | Chassis Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 22 Weeks |
| 製造商零件編號: | APT70GR120J |
| 輸入電容（連鎖商店）@的Vce: | 7.26nF @ 25V |
| 輸入: | Standard |
| IGBT類型: | NPT |
| 展開說明: | IGBT Module NPT Single 1200V 112A 543W Chassis Mount SOT-227 |
| 描述: | IGBT 1200V 112A 543W SOT227 |
| 電流 - 集電極截止（最大）: | 1mA |
| 電流 - 集電極（Ic）（最大）: | 112A |
| 組態: | Single |
| Email: | [email protected] |
APT70GR120J的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
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APT70GR120JD60 | Microsemi Corporation | IGBT 1200V 112A 543W SOT227 | 在線詢價 |
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APT70GR120B2 | Microsemi Corporation | IGBT 1200V 160A 961W TO247 | 在線詢價 |
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APT70GR120L | Microsemi Corporation | IGBT 1200V 160A 961W TO264 | 在線詢價 |
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APT70SM70B | Microsemi Corporation | POWER MOSFET - SIC | 在線詢價 |
|
APT70SM70S | Microsemi Corporation | POWER MOSFET - SIC | 在線詢價 |
|
APT70SM70J | Microsemi Corporation | POWER MOSFET - SIC | 在線詢價 |
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APT70GR65B | Microsemi Corporation | IGBT 650V 134A 595W TO-247 | 在線詢價 |
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APT70GR65B2DU40 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | 在線詢價 |
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IRG5U75HH06E | Infineon Technologies | MOD IGBT 600V 75A POWIR ECO 2 | 在線詢價 |
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APTGT75TL60T3G | Microsemi Corporation | POWER MODULE IGBT 600V 75A SP3 | 在線詢價 |
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APT70GR65B2SCD30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | 在線詢價 |
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