購買 AOWF4S60與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 4.1V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 系列: | aMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 900 mOhm @ 2A, 10V |
| 功率耗散(最大): | 25W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | AOWF4S60 |
| 輸入電容(Ciss)(Max)@ Vds: | 263pF @ 100V |
| 柵極電荷(Qg)(Max)@ Vgs: | 6nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 4A (Tc) 25W (Tc) Through Hole |
| 漏極至源極電壓(Vdss): | 600V |
| 描述: | MOSFET N-CH 600V 4A TO262F |
| 電流 - 25°C連續排水(Id): | 4A (Tc) |
| Email: | [email protected] |