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AOV11S60
- 型號:
- AOV11S60
- 描述:
- MOSFET N-CH 600V 0.65A 5-DFN
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14583 Pieces
簡單介紹
BYCHIPS是 AOV11S60的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的AOV11S60購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4.1V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 4-DFN-EP (8x8) |
| 系列: | aMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 500 mOhm @ 3.8A, 10V |
| 功率耗散（最大）: | 8.3W (Ta), 156W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 4-VSFN Exposed Pad |
| 其他名稱: | 785-1683-2 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 3 (168 Hours) |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | AOV11S60 |
| 輸入電容（Ciss）（Max）@ Vds: | 545pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 11nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 650mA (Ta), 8A (Tc) 8.3W (Ta), 156W (Tc) Surface Mount 4-DFN-EP (8x8) |
| 漏極至源極電壓（Vdss）: | 600V |
| 描述: | MOSFET N-CH 600V 0.65A 5-DFN |
| 電流 - 25°C連續排水（Id）: | 650mA (Ta), 8A (Tc) |
| Email: | [email protected] |
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